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| SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type 2SK2663 ( F1E90HVX2 ) 900V 1A FEATURES *oe Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. *oe static Rds(on) is small. The *oe switching time is fast. The *oe Avalanche resistance guaranteed. APPLICATION *oe Switching power supply of AC 240V input OUTLINE DIMENSIONS Case : E-pack (Unit : mm) *oe High voltage power supply *oe Inverter RATINGS *oeAbsolute Maximum Ratings * = 25*Z*j Tc i Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Channel Temperature Tch 150 Drain-Source Voltage VDSS 900 Gate-Source Voltage VGSS *}30 Continuous Drain Current* DC*j i ID 1 Continuous Drain Current* Peak) i IDP Pulse width*...10Es, Duty cycle*...1/100 2 Continuous Source Current* DC*j i IS 1 PT 10 Total Power Dissipation Repetitive Avalanche Current IAR Tch= 150*Z 1 Single Avalanche Energy EAS Tch= 25*Z 10 Repetitive Avalanche Energy EAR Tch= 25*Z 1 Unit *Z V A W A mJ Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd HVX-2 Series Power MOSFET Electrical Characteristics Tc = 25 Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current gfs Forward Tranconductance Static Drain-Source On-tate Resistance RDS(ON) VTH Gate Threshold Voltage VSD Source-Drain Diode Forward Voltage jc Thermal Resistance Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Time ton Turn-Off Time toff Conditions 2SK2663 ( F1E90HVX2 ) Min. 900 Typ. Max. 250 0.1 0.6 2.5 1.0 10.5 3.0 Unit V A S V ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 0.5A, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.2mA, VDS = 10V IS = 0.5A, VGS = 0V junction to case VDD = 400V, VGS = 10V, ID = 1A VDS = 25V, VGS = 0V, f = 1MHZ ID = 0.5A, VDD = 150V, RL = 300 10.5 230 5 23 10 50 14 3.5 1.5 12.5 / nC pF 18 85 ns Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SK2663 2 Tc = -55C Transfer Characteristics 25C 1.5 Drain Current ID [A] 100C 1 150C 0.5 VDS = 25V TYP 0 0 5 10 15 20 Gate-Source Voltage VGS [V] 2SK2663 100 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] ID = 0.5A 10 1 VGS = 10V pulse test TYP -50 0 50 100 150 Case Temperature Tc [C] 2SK2663 6 Gate Threshold Voltage 5 Gate Threshold Voltage VTH [V] 4 3 2 1 VDS = 10V ID = 1mA TYP -50 0 50 100 150 0 Case Temperature Tc [C] 2SK2663 10 Safe Operating Area 1 Drain Current ID [A] 100s 200s 0.1 R DS(ON) limit 1ms 10ms 0.01 DC Tc = 25C Single Pulse 0.001 1 10 100 1000 Drain-Source Voltage VDS [V] 2SK2663 Transient Thermal Impedance 100 10 1 Transient Thermal Impedance jc(t) [C/W] 0.1 0.01 10-4 10-3 10-2 10-1 100 101 Time t [s] 2SK2663 100 Single Avalanche Energy Derating Single Avalanche Energy Derating [%] 80 60 40 20 0 0 50 100 150 Starting Channel Temperature Tch [C] 2SK2663 1000 Capacitance Ciss Capacitance Ciss Coss Crss [pF] 100 Coss 10 Crss f=1MHz Ta=25C TYP 1 0 20 40 60 80 100 Drain-Source Voltage VDS [V] 2SK2663 Single Avalanche Current - Inductive Load VDD = 100V VGS = 15V 0V Rg = 100 10 IAS = 1A 1 Single Avalanche Current IAS [A] EAR = 1mJ EAS = 10mJ 0.1 0.1 1 10 100 Inductance L [mH] 2SK2663 100 Power Derating 80 Power Derating [%] 60 40 20 0 0 50 100 150 Case Temperature Tc [C] 2SK2663 500 Gate Charge Characteristics 20 VDS Drain-Source Voltage VDS [V] VGS VDD = 400V 300 200V 100V 15 10 200 5 100 ID = 1A TYP 0 0 5 10 15 0 20 Gate Charge Qg [nC] Gate-Source Voltage VGS [V] 400 |
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